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ZXMN6A08G 60V SOT223 N-channel enhancement mode MOSFET
Summary
V(BR)DSS 60 RDS(on) ( )
0.080 @ VGS = 10V 0.150 @ VGS = 4.5V
ID (A) 5.3 2.8
Description
This new generation trench MOSFET from Zetex features a unique structure combining the benefits of low on-resistance and fast switching, making it ideal for high efficiency power management applications.
Features
* * * * * Low on-resistance Fast switching speed Low threshold Low gate drive SOT223 package
D
G S
Applications
* * * * DC-DC converters Power management functions Disconnect switches Motor control
S D D G
Tape width (mm) 12 12 Quantity per reel 1,000 4,000
Ordering information
Device ZXMN6A08GTA ZXMN6A08GTC Reel size (inches) 7 13
Pinout - top view
Device marking
ZXMN 6A08
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ZXMN6A08G
Absolute maximum ratings
Parameter Drain-source voltage Gate-source voltage Continuous drain current @ VGS = 10V; Tamb = 25C(b) @ VGS = 10V; Tamb = 70C(b) @ VGS = 10V; Tamb = 25C(a) Pulsed drain current(c) Continuous source current (body diode)(b) Pulsed source current (body diode)(c) Power dissipation at Tamb = 25C(a) Linear derating factor Power dissipation at Tamb = 25C(b) Linear derating factor Operating and storage temperature range Tj, Tstg PD IDM IS ISM PD Symbol VDSS VGS ID Limit 60 20 5.3 4.2 3.8 20 2.1 20 2 16 3.9 31 -55 to +150 A A A W mW/C W mW/C C Unit V V A
Thermal resistance
Parameter Junction to ambient(a) Junction to ambient(b) Symbol R JA R JA Limit 62.5 32 Unit C/W C/W
NOTES: (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. (b) For a device surface mounted on FR4 PCB measured at t 10 sec. (c) Repetitive rating - 25mm x 25mm FR4 PCB, D=0.02, pulse width 300 s - pulse width limited by maximum junction temperature.
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ZXMN6A08G
Typical characteristics
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ZXMN6A08G
Electrical characteristics (at Tamb = 25C unless otherwise stated)
Parameter Static Drain-source breakdown voltage Zero gate voltage drain current Gate-body leakage Gate-source threshold voltage Static drain-source on-state resistance(*) Forward transconductance Dynamic() Input capacitance Output capacitance Reverse transfer capacitance Switching () () Turn-on delay time Rise time Turn-off delay time Fall time Gate charge Total gate charge Gate-source charge Gate drain charge Source-drain diode Diode forward voltage(*) Reverse recovery time() Reverse recovery charge() VSD trr Qrr 0.88 19.2 30.3 1.2 V ns nC Tj=25C, IS= 4A, VGS=0V Tj=25C, IS= 1.4A, di/dt=100A/ s td(on) tr td(off) tf Qg Qg Qgs Qgd 2.6 2.1 12.3 4.6 4.0 5.8 1.4 1.9 ns ns ns ns nC nC nC nC VDS= 30V, VGS= 5V ID= 1.4A VDS= 30V, VGS= 10V ID= 1.4A VDD= 30V, ID= 1.5A RG6.0 , VGS= 10V Ciss Coss Crss 459 44.2 24.1 pF pF pF VDS= 40V, VGS=0V f=1MHz
(*) ()
Symbol
Min.
Typ.
Max.
Unit
Conditions
V(BR)DSS IDSS IGSS VGS(th) RDS(on) gfs
60 0.5 100 1 0.080 0.150 6.6
V A nA V
ID= 250 A, VGS=0V VDS= 60V, VGS=0V VGS=20V, VDS=0V ID= 250 A, VDS=VGS VGS= 10V, ID= 4.8A VGS= 4.5V, ID = 4.2A
S
VDS= 15V, ID= 4.8A
NOTES: (*) Measured under pulsed conditions. Pulse width 300 s; duty cycle 2%. () Switching characteristics are independent of operating junction temperature. () For design aid only, not subject to production testing.
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ZXMN6A08G
Typical characteristics
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ZXMN6A08G
Typical characteristics
Current regulator
QG
12V 50k Same as D.U.T
VG
QGS
QGD
VDS IG D.U.T ID VGS
Charge
Basic gate charge waveform
Gate charge test circuit
VDS 90%
VGS RG RD VDS VCC
10% VGS td(on) t(on) tr td(off) t(on) tr
Switching time waveforms
Switching time test circuit
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ZXMN6A08G
Intentionally left blank
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ZXMN6A08G
Package outline - SOT223
DIM A A1 b b2 C D
Millimeters Min 0.02 0.66 2.90 0.23 6.30 Max 1.80 0.10 0.84 3.10 0.33 6.70 -
Inches Min 0.0008 0.026 0.114 0.009 0.248 Max 0.071 0.004 0.033 0.122 0.013 0.264
DIM e e1 E E1 L -
Millimeters Min Max 2.30 BSC 4.60 BSC 6.70 3.30 0.90 7.30 3.70 -
Inches Min Max 0.0905 BSC 0.181 BSC 0.264 0.130 0.355 0.287 0.146 -
Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches
Europe Zetex GmbH Streitfeldstrae 19 D-81673 Munchen Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 europe.sales@zetex.com
Americas Zetex Inc 700 Veterans Memorial Highway Hauppauge, NY 11788 USA Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 usa.sales@zetex.com
Asia Pacific Zetex (Asia Ltd) 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Telephone: (852) 26100 611 Fax: (852) 24250 494 asia.sales@zetex.com
Corporate Headquarters Zetex Semiconductors plc Zetex Technology Park, Chadderton Oldham, OL9 9LL United Kingdom Telephone: (44) 161 622 4444 Fax: (44) 161 622 4446 hq@zetex.com
For international sales offices visit www.zetex.com/offices Zetex products are distributed worldwide. For details, see www.zetex.com/salesnetwork This publication is issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contact or be regarded as a representation relating to the products or services concerned. The company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.
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